Title of article
FET device performance, morphology and X-ray thin film structure of unsubstituted and modified quinquethiophenes
Author/Authors
Ostoja، نويسنده , , P. and Maccagnani، نويسنده , , P. and Gazzano، نويسنده , , M. and Cavallini، نويسنده , , M. and Kengne، نويسنده , , J.C. and Kshirsagar، نويسنده , , R. and Biscarini، نويسنده , , F. and Melucci، نويسنده , , M. and Zambianchi، نويسنده , , M. and Barbarella، نويسنده , , G.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2004
Pages
8
From page
243
To page
250
Abstract
Bottom contact FET devices were realized, using vacuum evaporated thin films of unsubstituted quinquethiophene and two modified derivatives deposited at different substrate temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) data on th
Keywords
FET device , X-ray thin film structure , atomic force microscopy , Quinquethiophenes
Journal title
Synthetic Metals
Serial Year
2004
Journal title
Synthetic Metals
Record number
2080859
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