Author/Authors :
Kang، نويسنده , , S.J. and Chung، نويسنده , , K.B. and Park، نويسنده , , D.S and Kim، نويسنده , , H.J. and Choi، نويسنده , , Y.K. and Jang، نويسنده , , M.H. and Noh، نويسنده , , M. and Whang، نويسنده , , C.N.، نويسنده ,
Abstract :
Pentacene thin film transistors (TFTs) on a high-κ Gd2O3 gate insulator layer were fabricated and characterized. The Gd2O3 layer was grown by ion beam assisted deposition (IBAD) on a heavily-doped silicon substrate in ultra high vacuum, where the measured
