Title of article :
Organic field-effect transistors with ultrathin modified gate insulator
Author/Authors :
Majewski، نويسنده , , L.A. and Grell، نويسنده , , M.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2005
Abstract :
In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (∼3.5 nm) SiO2 layers, which were modified
Keywords :
Gate insulator , Self-assembled monolayer (SAM) , Low voltage , Organic field-effect transistor (OFET)
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals
