Title of article
The effect of C60 doped interlayer for lifetime improvement of phosphorescent light emitting diodes
Author/Authors
Lee، نويسنده , , Jun Yeob، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2006
Pages
4
From page
852
To page
855
Abstract
The effect of C60 doped interlayer between poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate) (PEDOT) and light emitting layer on the lifetime of phosphorescent organic light emitting diodes was investigated by changing the C60 content from 0% to 3%. Doping of C60 in 1,3,5-tris(N,N-bis-(4,5-methoxyphenyl)-aminophenyl)benzol (TDAPB) resulted in the increase of lifetime by more than 100% compared with lifetime of non-doped devices.
Keywords
C60 , Doping , Lifetime
Journal title
Synthetic Metals
Serial Year
2006
Journal title
Synthetic Metals
Record number
2083408
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