Title of article :
Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors
Author/Authors :
Shea، نويسنده , , Patrick B. and Pattison، نويسنده , , Lisa R. and Kawano، نويسنده , , Manami and Chen، نويسنده , , Charlene and Chen، نويسنده , , Jihua and Petroff، نويسنده , , Pierre and Martin، نويسنده , , David C. and Yamada، نويسنده , , Hiroko and Ono، نويسنده , , Noboru and Kanicki، نويسنده , , Jerzy، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2007
Pages :
8
From page :
190
To page :
197
Abstract :
The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm2/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 104.
Keywords :
atomic force microscopy , optical absorption , X-ray diffraction , organic field-effect transistors , Solution processing , Metallotetrabenzoporphyrins
Journal title :
Synthetic Metals
Serial Year :
2007
Journal title :
Synthetic Metals
Record number :
2083832
Link To Document :
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