Title of article :
Comparison of electrical characteristics for p-type and n-type organic thin film transistors using copper phthalocyanine
Author/Authors :
Kim، نويسنده , , Kihyun and Kwak، نويسنده , , Tae Ho and Cho، نويسنده , , Mi Yeon and Lee، نويسنده , , Jin Woo and Joo، نويسنده , , Jinsoo، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2008
Pages :
3
From page :
553
To page :
555
Abstract :
The p-type and n-type organic thin film transistors (OTFTs) were fabricated in the same experimental conditions by using hexadecahydro copper phthalocyanine (H16CuPc) and hexadecafluoro copper phthalocynine (F16CuPc) molecules, respectively. The mobilities of H16CuPc and F16CuPc-based OTFT devices in saturation region were measured to be ∼1.22 × 10−3 cm2/V s and ∼1.04 × 10−3 cm2/V s, respectively. The temperature dependence of the mobility and activation energy (Ea) for both OTFTs were measured in saturation and linear regions of the drain-source current. We found that the Ea of the F16CuPc-based OTFTs was lower than that of H16CuPc-based ones. The gate voltage (Vg) dependence of the field-effect mobility measured in linear region for the F16CuPc-based OTFTs was more stable, i.e., weaker variation of the field-effect mobility with increasing Vg, than that of the H16CuPc-based ones. The high electron affinity of the hexadecafluorine (F16) in CuPc contributed to the effective electron accumulation in the active channel.
Keywords :
Organic thin film transistor , n-Type , p-Type , Copper phthalocyanine , Mobility
Journal title :
Synthetic Metals
Serial Year :
2008
Journal title :
Synthetic Metals
Record number :
2084600
Link To Document :
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