• Title of article

    Organic light-emitting diodes based on new n-doped electron transport layer

  • Author/Authors

    Ma، نويسنده , , J.W. and Xu، نويسنده , , Wei and Jiang، نويسنده , , X.Y. and Zhang، نويسنده , , Z.L.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2008
  • Pages
    5
  • From page
    810
  • To page
    814
  • Abstract
    Organic light-emitting diodes with 8-hydroxy-quinolinato lithium doped 4′7-diphyenyl-1, 10-phenanthroline as electron transport layer (ETL), and etrafluro-tetracyano-quinodimethane doped 4,4′,4″-tris(3-methylphenylphenylamono) triphenylamine as hole transport layer (HTL) are demonstrated. The conductivity of carrier transport layers with different doping concentration is examined by hole-only and electron-only devices. Compared with the referenced device (without doping), the current efficiency and power efficiency of the p–i–n device are enhanced by approximately 51% and 89%, respectively. This improvement is attributed to the improved conductivity of the transport layers and the efficient charge balance in the emission zone.
  • Keywords
    organic light-emitting diodes , Carrier transport , Conductivity , Doping concentration
  • Journal title
    Synthetic Metals
  • Serial Year
    2008
  • Journal title
    Synthetic Metals
  • Record number

    2084668