Title of article
Organic light-emitting diodes based on new n-doped electron transport layer
Author/Authors
Ma، نويسنده , , J.W. and Xu، نويسنده , , Wei and Jiang، نويسنده , , X.Y. and Zhang، نويسنده , , Z.L.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2008
Pages
5
From page
810
To page
814
Abstract
Organic light-emitting diodes with 8-hydroxy-quinolinato lithium doped 4′7-diphyenyl-1, 10-phenanthroline as electron transport layer (ETL), and etrafluro-tetracyano-quinodimethane doped 4,4′,4″-tris(3-methylphenylphenylamono) triphenylamine as hole transport layer (HTL) are demonstrated. The conductivity of carrier transport layers with different doping concentration is examined by hole-only and electron-only devices. Compared with the referenced device (without doping), the current efficiency and power efficiency of the p–i–n device are enhanced by approximately 51% and 89%, respectively. This improvement is attributed to the improved conductivity of the transport layers and the efficient charge balance in the emission zone.
Keywords
organic light-emitting diodes , Carrier transport , Conductivity , Doping concentration
Journal title
Synthetic Metals
Serial Year
2008
Journal title
Synthetic Metals
Record number
2084668
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