Title of article
Using the copper selenide as hole injector electrode in MeH-PPV polymer light emitting diodes
Author/Authors
Rabelo، نويسنده , , Adriano César and Marletta، نويسنده , , Alexandre and Silva، نويسنده , , Raigna A. and Neto، نويسنده , , Newton M. Barbosa and Bottecchia، نويسنده , , Otلvio Luiz Gusso and de Oliveira، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2009
Pages
2
From page
2318
To page
2319
Abstract
This work addresses the electrical characterization of the junction copper selenide (Cu2−xSe) and poly-[2-metoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MeH-PPV). The Cu2−xSe film was produced on copper (Cu) substrate using the chemical bath deposition technique. The polymer light emitting diodes were processed using the following layers: Cu/Cu2−xSe or ITO (indium tin oxide), MeH-PPV and aluminum (Al). The barrier height (ϕ) of Cu/Cu2−xSe/MeH-PPV was estimated using the Fowler–Nordheim field-emission tunneling theory. We observed that ϕ decreases from 180 meV, for conventional ITO/MeH-PPV/Al device, to 10 meV for Cu/Cu2−xSe/MeH-PPV/al diode.
Keywords
Copper selenide , Cu2?xSe , MEH-PPV , Photovoltaic , PLED
Journal title
Synthetic Metals
Serial Year
2009
Journal title
Synthetic Metals
Record number
2086034
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