• Title of article

    Complementary circuits based on solution processed low-voltage organic field-effect transistors

  • Author/Authors

    Ball، نويسنده , , James M. and Wِbkenberg، نويسنده , , Paul H. and Kooistra، نويسنده , , Floris B. and Hummelen، نويسنده , , Jan C. and de Leeuw، نويسنده , , Dago M. and Bradley، نويسنده , , Donal D.C. and Anthopoulos، نويسنده , , Thomas D.، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2009
  • Pages
    3
  • From page
    2368
  • To page
    2370
  • Abstract
    The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below |1.5| V. The reduction in operating voltage is achieved by implementing ultra-thin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing.
  • Keywords
    OFET , Organic field-effect transistor , low-voltage , Fullerene , P3HT , Phosphonic acid , Inverter , Organic complementary logic , Self-assembled monolayer dielectric
  • Journal title
    Synthetic Metals
  • Serial Year
    2009
  • Journal title
    Synthetic Metals
  • Record number

    2086092