Title of article :
Complementary circuits based on solution processed low-voltage organic field-effect transistors
Author/Authors :
Ball، نويسنده , , James M. and Wِbkenberg، نويسنده , , Paul H. and Kooistra، نويسنده , , Floris B. and Hummelen، نويسنده , , Jan C. and de Leeuw، نويسنده , , Dago M. and Bradley، نويسنده , , Donal D.C. and Anthopoulos، نويسنده , , Thomas D.، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2009
Abstract :
The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below |1.5| V. The reduction in operating voltage is achieved by implementing ultra-thin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing.
Keywords :
OFET , Organic field-effect transistor , low-voltage , Fullerene , P3HT , Phosphonic acid , Inverter , Organic complementary logic , Self-assembled monolayer dielectric
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals