• Title of article

    Depletion- and ambipolar-mode field-effect transistors based on the organic heterojunction composed of pentacene and hexadecafluorophtholocyaninatocopper

  • Author/Authors

    Hong، نويسنده , , Fei and Xing، نويسنده , , Feifei and Gu، نويسنده , , Wen and Jin، نويسنده , , Weipeng and Zhang، نويسنده , , Jianhua and Wang، نويسنده , , Jun، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2010
  • Pages
    4
  • From page
    475
  • To page
    478
  • Abstract
    We investigated heterojunction organic field-effect transistors (OFETs) using pentacene and hexadecafluorophtholocyaninatocopper (F16CuPc) as double active layers. Two operation modes including depletion- and ambipolar-type were observed depending on the deposition order of two organic films. Depletion-mode was firstly observed from that devices with pentacene as the bottom layer and F16CuPc as the top layer, which was attributed to dipole effects originated from the pentacene/F16CuPc interface. Then improved device performances were obtained with mobility from 0.87 to 1.06 cm2/V s, and threshold voltage shifted from −20 to +25 V as compared with conventional pentacene-based devices. Furthermore, the heterojunction OFETs exhibited typical ambipolar transport when alternating the deposition order of two films, which exhibited ambipolar mobilities with 0.06 cm2/V s for electron and 0.0025 cm2/V s for hole, respectively. All results implied the utilization of heterojunction can effectively improve the device performances of OFET, and operation mode strongly on the deposition order of two films.
  • Keywords
    threshold voltage , Organic heterojunction , DEPLETION , Ambipolar
  • Journal title
    Synthetic Metals
  • Serial Year
    2010
  • Journal title
    Synthetic Metals
  • Record number

    2086880