Title of article
Depletion- and ambipolar-mode field-effect transistors based on the organic heterojunction composed of pentacene and hexadecafluorophtholocyaninatocopper
Author/Authors
Hong، نويسنده , , Fei and Xing، نويسنده , , Feifei and Gu، نويسنده , , Wen and Jin، نويسنده , , Weipeng and Zhang، نويسنده , , Jianhua and Wang، نويسنده , , Jun، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2010
Pages
4
From page
475
To page
478
Abstract
We investigated heterojunction organic field-effect transistors (OFETs) using pentacene and hexadecafluorophtholocyaninatocopper (F16CuPc) as double active layers. Two operation modes including depletion- and ambipolar-type were observed depending on the deposition order of two organic films. Depletion-mode was firstly observed from that devices with pentacene as the bottom layer and F16CuPc as the top layer, which was attributed to dipole effects originated from the pentacene/F16CuPc interface. Then improved device performances were obtained with mobility from 0.87 to 1.06 cm2/V s, and threshold voltage shifted from −20 to +25 V as compared with conventional pentacene-based devices. Furthermore, the heterojunction OFETs exhibited typical ambipolar transport when alternating the deposition order of two films, which exhibited ambipolar mobilities with 0.06 cm2/V s for electron and 0.0025 cm2/V s for hole, respectively. All results implied the utilization of heterojunction can effectively improve the device performances of OFET, and operation mode strongly on the deposition order of two films.
Keywords
threshold voltage , Organic heterojunction , DEPLETION , Ambipolar
Journal title
Synthetic Metals
Serial Year
2010
Journal title
Synthetic Metals
Record number
2086880
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