Author/Authors :
Li، نويسنده , , Yinhua and Gong، نويسنده , , Jian and McCune، نويسنده , , Mallarie and He، نويسنده , , Gaohong and Deng، نويسنده , , Yulin، نويسنده ,
Abstract :
The characteristics of the p–n junction between vertically aligned ZnO nanorods and polyaniline (PANI) thin film were investigated. The rectifying behavior of the I–V curve of ZnO/PANI diode was verified with assembled ZnO/PANI structures. The cut-in voltage of the p–n junction was found to be around 0.5 V and the reverse breakdown voltage was about −27 V. In addition, the effects of UV illumination and NH3 exposure on the I–V characteristics of ZnO/PANI configuration were also investigated.
