Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics

We report a copper hexadecafluorophthalocyanine (F16CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F16CuPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F16CuPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated.