Title of article
Improved performance of Si-based top-emitting organic light-emitting device using MoOx buffer layer
Author/Authors
Zhang، نويسنده , , Xiao-Wen and Li، نويسنده , , Jun and Zhang، نويسنده , , Liang and Lin، نويسنده , , Huaping and Jiang، نويسنده , , Xue-Yin and Zhu، نويسنده , , Wen-Qing and Zhang، نويسنده , , Zhi-Lin، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2010
Pages
3
From page
788
To page
790
Abstract
Highly efficient Si-based top-emitting organic light-emitting device (TOLED) using MoOx buffer layer is demonstrated. With tris(8-hydroquinoline) aluminum as emitting and electron-transport layer, the p-Si/MoOx based TOLED shows a maximum luminous efficiency of 1.1 cd/A and a power efficiency of 0.68 lm/W, which are almost double those (0.64 cd/A and 0.34 lm/W) of p-Si/SiO2 based TOLED. Moreover, in comparison with the widely used thermally grown SiO2 buffer layer, MoOx can be deposited by conventional evaporation technology and thereby simplifying fabrication process.
Keywords
Work function , Buffer layer , OLED , SI , Top-emitting
Journal title
Synthetic Metals
Serial Year
2010
Journal title
Synthetic Metals
Record number
2087076
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