Title of article :
Theoretical study the trap and carrier-density dependent electron mobility in pentacene ab-plane by the steady master equation
Author/Authors :
Yin، نويسنده , , Shiwei and Yang، نويسنده , , Yongmei and Lv، نويسنده , , Yanfeng، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Abstract :
The steady state master equation coupled Marcus–Hush electron transfer theory is developed to calculate the two-dimensional electron and hole mobilities in pentacene ab-plane. In this paper, we numerically investigated the influences of the random distributed traps and charge-carrier densities on the 2D mobilities. The study showed that shallow traps (<7.5kT) give few effects on the mobilities for various carrier densities, while deep traps (>10kT) remarkably decrease mobilities, in particularly, when the carriers density cannot quenched them. However, when the traps are fully quenched due to large carrier densities, the mobility will be nearly back to their intrinsic mobility values.
Keywords :
pentacene , Trap-dependant electron mobility , Master equation
Journal title :
Synthetic Metals
Journal title :
Synthetic Metals