Title of article :
Flexible N-channel organic phototransistor on polyimide substrate
Author/Authors :
Park، نويسنده , , Jae-eun and Mukherjee، نويسنده , , Biswanath and Cho، نويسنده , , Hyejin and Kim، نويسنده , , Sungyoung and Pyo، نويسنده , , Seungmoon، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
5
From page :
143
To page :
147
Abstract :
We report a flexible photoresponsive organic field-effect transistor, phototransistor (OPT), based on a fluorinated copperphthalocyanine (F16CuPc) and polymer gate dielectric on a flexible polyimide substrate. Under light illumination, the device exhibited a photoresponsivity of 2.15 mA/W at VGS = 2 V and optical power of 5.66 mW/cm2. The current ratio (Iphoto/Idark) of the light to dark states was calculated to be around 300 at VGS = 2 V. Furthermore, the switching time of the phototransistor was found to be lower than 0.1 s. When the substrate was bent outward up to a bending radius of 4.4 mm, the device still showed photoresponsive field-effect characteristics. However, the photoresponsivity and Iphoto/Idark ratio decreased with decreasing bending radius. These results indicate that the present flexible OPT could potentially be used in optoelectronic device applications.
Keywords :
Photoresponse , organic semiconductor , Gate dielectric , Organic field-effect transistor , Phototransistor
Journal title :
Synthetic Metals
Serial Year :
2011
Journal title :
Synthetic Metals
Record number :
2087956
Link To Document :
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