Title of article
Charge injection, transport and localization in rubrene
Author/Authors
Burke، نويسنده , , Franklyn and Stamenov، نويسنده , , Plamen and Coey، نويسنده , , J.M.D.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2011
Pages
7
From page
563
To page
569
Abstract
Rubrene crystals bridging a 200–350 nm gap between electrodes made of gold or various ferromagnets (Ni80Fe20, Co90Fe10, Co90Fe10/AlOx) exhibit distinct current:voltage characteristics according to their contact resistance. Fits to the nonlinear characteristics with Ni80Fe20 contacts give a Schottky barrier height of 0.22(1) eV. Only for ohmic contacts with Ni80Fe20 was magnetoresistance observed; it is essentially negative and linear in field, reaching 4% in 5 T at 70 K. The magnetoresistance is tentatively attributed to weak localization. There is no evidence of spin-valve magnetoresistance in the lateral geometry, where the spin diffusion length should be less than 200 nm.
Keywords
Rubrene , magnetoresistance , Weak localization , Spin diffusion length , Schottky barrier height
Journal title
Synthetic Metals
Serial Year
2011
Journal title
Synthetic Metals
Record number
2088025
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