Title of article :
Polyimide/Ta2O5 nanocomposite gate insulators for enhanced organic thin-film transistor performance
Author/Authors :
Chen، نويسنده , , Liang-Hsiang and Lin، نويسنده , , Pang-Yen Ho، نويسنده , , Jia-Chong and Lee، نويسنده , , Cheng-Chung and Kim، نويسنده , , Choongik and Chen، نويسنده , , Ming-Chou، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2011
Pages :
5
From page :
1527
To page :
1531
Abstract :
This study reports the preparation and characterization of polyimide/Ta2O5 nanocomposite films as insulators for organic thin-film transistors (OTFTs). The degree of imidization, thermal, electrical, and surface properties of the nanocomposite films were characterized as a function of Ta2O5 precursor contents. The nanocomposite films, with controlled/comparable insulator electrical characteristics and surface properties, have been found to enhance dielectric constant compared to pristine polyimide films, which resulted in improved pentacene TFT performance by a factor of 2–3 with carrier mobility values as high as 0.38 cm2/V s.
Keywords :
Organic thin-film transistors (OTFTs) , Nanocomposite , Hybrid films , Gate insulator
Journal title :
Synthetic Metals
Serial Year :
2011
Journal title :
Synthetic Metals
Record number :
2088176
Link To Document :
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