Title of article
Arylene bisimides with triarylamine N-substituents as new solution processable organic semiconductors: Synthesis, spectroscopic, electrochemical and electronic properties
Author/Authors
Rybakiewicz، نويسنده , , Renata and Djurado، نويسنده , , David and Cybulski، نويسنده , , Hubert and Dobrzynska، نويسنده , , Ewelina and Kulszewicz-Bajer، نويسنده , , Irena and Boudinet، نويسنده , , Damien and Verilhac، نويسنده , , Jean-Marie and Zagorska، نويسنده , , Malgorzata and Pron، نويسنده , , Adam، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2011
Pages
11
From page
1600
To page
1610
Abstract
New solution processable organic semiconductors, consisting of pyrromelitic, naphthalene or perylene bisimide core and triarylamine N-substituents, have been synthesized. All three compounds are electrochemically active and undergo quasi-reversible oxidation and reduction as evidenced by cyclic voltammetry investigations. The oxidation process involves the transformation of the triarylamine substituents into radical cations as proven spectroscopically and spectroelectrochemically. The reduction process occurs at the arylene bisimide core leading to the formation of a radical anion and eventually a dianion in the second step. These findings are in perfect agreement with the DFT calculations which show that in the synthesized molecules the HOMO orbital is located on the triarylamine moiety whereas the LUMO one on the bisimide core. In all molecules studied the electrochemically determined ionization potential (IP) is slightly higher than 5.0 eV whereas in naphthalene and perylene derivatives the electron affinity (EA) is close to −3.9 eV. These values fulfill the requirements for n-type (electron) semiconductors in air operating n-channel field effect transistors (FETs) as well as for p-type (hole) conductors in p-channel FETs. To verify whether the newly synthesized compounds exhibit the expected electrical transport properties all organic (CYTOP dielectric) test transistors were fabricated. All three semiconductors showed no field effect in the n-channel configuration. To the contrary, they could be used in p-channel FETs showing, in the saturation regime, the hole mobility approaching 10−4 cm2 V−1 s−1 – the value which slightly exceeds that measured for low molecular weight, amorphous triarylamine semiconductors.
Keywords
Triarylamine derivatives , Low band semiconductors , DFT calculations , organic transistors , Arylene bisimides
Journal title
Synthetic Metals
Serial Year
2011
Journal title
Synthetic Metals
Record number
2088188
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