Metal-insulator transition in heavily doped semiconductors

The past few years have seen a resurgence of interest in the physics of heavily doped semiconductors at the metal-insulator transition (MIT). A new set of experiments has been embarked on to elucidate the critical behavior, scaling properties, role of localized magnetic moments on both sides of the MIT, and the difference between uncompensated and compensated materials. Whereas these 3D systems have been known as prototype MIT systems where disorder and Coulomb interactions both play an important role, the recent observation of an MIT in 2D MOSFET structures is new and calls for special attention.