Title of article
Ballistic-electron-emission microscopy of semiconductor heterostructures
Author/Authors
Bell، نويسنده , , L Douglas and Narayanamurti، نويسنده , , Venkatesh، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
7
From page
38
To page
44
Abstract
Ballistic-electron-microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport. Recent applications include band offsets, electron scattering, confined states, interfacial defects, and insulating layers.
Journal title
Current Opinion in Solid State and Materials Science
Serial Year
1998
Journal title
Current Opinion in Solid State and Materials Science
Record number
2088333
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