Title of article :
Photocurrent stability and responsivity in the n-type Si/ZnO-doped conducting polymer photovoltaic device
Author/Authors :
Lin، نويسنده , , Yow-Jon and Su، نويسنده , , Ting-Hong and Lin، نويسنده , , Jung-Chung and Su، نويسنده , , Yu-Chao، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
4
From page :
406
To page :
409
Abstract :
In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film.
Keywords :
Polymer , Photoresponse , ZNO , Conductivity , DEFECT , SI
Journal title :
Synthetic Metals
Serial Year :
2012
Journal title :
Synthetic Metals
Record number :
2088823
Link To Document :
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