• Title of article

    Protonic defect induced carrier doping in TTFCOO−NH4+: Tunable doping level by solvent

  • Author/Authors

    Terauchi، نويسنده , , Takeshi and Kobayashi، نويسنده , , Yuka and Iwai، نويسنده , , Hideo and Tanaka، نويسنده , , Akihiro، نويسنده ,

  • Issue Information
    دوماهنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    531
  • To page
    535
  • Abstract
    The origin of carrier doping in TTFCOO−NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO−NH4+ is tunable over quite a wide range (9–33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pKSH) of solvent, which likely controls inclusion of protonic defect in the salts.
  • Keywords
    salt bridge , Carrier doping , charge transport , XPS , Protonic defect
  • Journal title
    Synthetic Metals
  • Serial Year
    2012
  • Journal title
    Synthetic Metals
  • Record number

    2088884