Title of article
Protonic defect induced carrier doping in TTFCOO−NH4+: Tunable doping level by solvent
Author/Authors
Terauchi، نويسنده , , Takeshi and Kobayashi، نويسنده , , Yuka and Iwai، نويسنده , , Hideo and Tanaka، نويسنده , , Akihiro، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2012
Pages
5
From page
531
To page
535
Abstract
The origin of carrier doping in TTFCOO−NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO−NH4+ is tunable over quite a wide range (9–33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pKSH) of solvent, which likely controls inclusion of protonic defect in the salts.
Keywords
salt bridge , Carrier doping , charge transport , XPS , Protonic defect
Journal title
Synthetic Metals
Serial Year
2012
Journal title
Synthetic Metals
Record number
2088884
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