Ferromagnetic nanodevices based on (Ga,Mn)As

Diluted magnetic semiconductors such as (Ga,Mn)As are model systems for investigations of spin electronics. Recent studies have revealed remarkably low thresholds for current-induced magnetization switching, as well as exciting new magnetoresistance effects due to density-of-states anisotropies in tunnel junctions and nanoconstrictions. In this review, some important recent experiments on (Ga,Mn)As transport devices are highlighted and the prospects for room temperature operation are briefly addressed.