Title of article :
Electron mobility in hexaazatriphenylene hexacarbonitrile field-effect transistors
Author/Authors :
Saragi، نويسنده , , Tobat P.I. and Reichert، نويسنده , , Thomas and Scheffler، نويسنده , , Ayna and Kussler، نويسنده , , Manfred and Salbeck، نويسنده , , Josef، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2012
Pages :
5
From page :
1572
To page :
1576
Abstract :
We report on the field-effect mobility of electrons in thin films of hexaazatriphenylene hexacarbonitrile. An electron mobility of up to 2.5 × 10−4 cm2/Vs is obtained at room temperature. The temperature dependence of the mobility is in agreement with hoping transport in weakly coupled organic semiconductors. Moreover, the surface morphology of the corresponding thin films reveals a domain-like feature in nanoscale size.
Keywords :
Hexaazatriphenylene hexacarbonitrile (HAT-CN) , Electron transport material , n-Type OFET , Field effect mobility
Journal title :
Synthetic Metals
Serial Year :
2012
Journal title :
Synthetic Metals
Record number :
2089281
Link To Document :
بازگشت