Title of article
Atom Probe Tomography and field evaporation of insulators and semiconductors: Theoretical issues
Author/Authors
Elena P. Silaeva، نويسنده , , Elena P. and Karahka، نويسنده , , Markus and Kreuzer، نويسنده , , H.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
211
To page
216
Abstract
After reviewing the physics and chemistry in high electrostatic fields and summarizing the theoretical results for Atom Probe Tomography of metallic tips, we turn to the new challenges associated with insulators and semiconductors with regard to local fields inside and on the surface of such materials. The recent (theoretical) discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion.
Keywords
Field evaporation , Semiconductors , Insulators , Laser-assisted atom probe tomography
Journal title
Current Opinion in Solid State and Materials Science
Serial Year
2013
Journal title
Current Opinion in Solid State and Materials Science
Record number
2089357
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