Title of article :
High spin polarization at the Fe/C60 interface in the Fe-doped C60 film
Author/Authors :
Sakai، نويسنده , , Seiji and Matsumoto، نويسنده , , Yoshihiro and Ohtomo، نويسنده , , Manabu and Entani، نويسنده , , Shiro and Avramov، نويسنده , , Pavel V. and Sorokin، نويسنده , , Pavel B. and Naramoto، نويسنده , , Hiroshi، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2013
Pages :
4
From page :
22
To page :
25
Abstract :
A process of tunneling conduction and the spin-dependent resistivity change (so-called tunneling magnetoresistance effect) in the Fe-doped C60 film with a granular structure is investigated for the current-into-plane device. Cooperative tunneling (cotunneling) through several Fe nanoparticles is suggested to be operative at temperatures lower than 20 K. By considering the effect of cotunneling on the magnetoresistance ratio, it is successfully shown that the spin polarization of tunneling electrons generated at the Fe/C60 interface is much higher than that in Fe crystal at low temperature in a similar fashion to that at the Co/C60 interface in the Co-doped C60 films. A strong temperature dependence of spin polarization is observed, suggesting a possible influence by the thermally induced disorders ascribed to the Fe atoms bonded with C60 in the C60Fe compound.
Keywords :
spin polarization , Spinterfaces , Fullerene , Magnetic metal , TMR effect
Journal title :
Synthetic Metals
Serial Year :
2013
Journal title :
Synthetic Metals
Record number :
2089944
Link To Document :
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