Enhancement of electron mobility and photovoltaic performance based on the P3HT:SPRGO organic photovoltaic

The time-of-flight method has been used to study the effect of P3HT:SPRGO composite films on charge mobility. Hole mobility was observed to remain constant at 7–10 × 10−5 cm2/V s as SPRGO concentration was increased from 0 to 20%, but then electron mobility had enhanced from 1.5 to 35 × 10−5 cm2/V s as SPRGO concentration was increased from 0 to 20%. The enhancement electron mobility was accompanied by an improved exciton dissociation of P3HT:SPRGO surface. Doping solution processable reduced graphene oxide (SPRGO) into P3HT that improved the organic photovoltaic (OPV) performance and the electron transported ability of P3HT:SPRGO composite films. The lower SPRGO concentration had improved OPV performance. The TOF (time of flight) curve of devices had shown that the electron mobility was enhanced along with increase of the SPRGO concentration. The beat OPV performance had reached 2.28% of power conversion efficiency. At the over high SPRGO concentration, the OPV performance had decreased along with an increase in SPRGO concentration. So the SPRGO is used for enhancing the electron mobility and OPV performance of P3HT:SPRGO.