Title of article
Investigating the effect of buffer layer on magnetoresistance in organic spin-valves
Author/Authors
Qin، نويسنده , , W. and Zhang، نويسنده , , Y.B. and Xie، نويسنده , , S.J.، نويسنده ,
Issue Information
دوماهنامه با شماره پیاپی سال 2013
Pages
4
From page
92
To page
95
Abstract
According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq3/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations.
Keywords
Buffer layer , Organic spintronics , magnetoresistance
Journal title
Synthetic Metals
Serial Year
2013
Journal title
Synthetic Metals
Record number
2090125
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