Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dots

We have investigated random telegraph noise (RTN) observed in individual semiconducting carbon nanotubes (CNTs) in Coulomb-blockade regime. RTN characteristics are studied as a function of gate-voltage and drain–source voltage. Our results are explained by the capture and emission of carriers by charge traps in the vicinity of CNTs. Because of the large RTN amplitude, often greater than ∼50% of the total current, RTN measurements can be developed into an effective tool to estimate the trap energy and the location of the trap in CNT quantum dot devices.