Title of article
Solid state demixing in Bi2Se3-Bi2Te3 and Bi2Se3-In2Se3 phase diagrams
Author/Authors
Bouanani، نويسنده , , H.Ghoumari and Eddike، نويسنده , , D. and Liautard، نويسنده , , Franco B. and Brun، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
11
From page
177
To page
187
Abstract
The Bi2Te3-Bi2Se3 and Bi2Se3-In2Se3 systems were studied by differential thermal analysis and X-ray powder diffraction. The phase diagrams of these systems were constructed; they are quasi-binary. In both cases, there are wide ranges of solid solutions based on the terminal compounds and an intermediate range of demixing. The solid solutions are of tetradymite type (rhombohedral R3m). Their limits are related to the substitution of the selenium-tellurium and bismuth-indium atoms in the layers. Electrical conductivity and thermoelectric power measurements confirm the boundaries of the solid solution regions deduced from the thermal and X-ray diffraction data.
Keywords
A. Electronic materials , A. Chalcogenides , C. Differential scanning calorimetry , D. phase equilibria , C. X-ray diffraction
Journal title
Materials Research Bulletin
Serial Year
1996
Journal title
Materials Research Bulletin
Record number
2093072
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