Crystal growth and characterization of SnS2

SnS2 crystals were grown by the stoichiometric composition technique (total synthesis). After their stoichiometrical investigation, they were characterized by means of (i) X-ray diffraction, which gave the following results for their structure: space group D33d — P3m1, lattice parameters a = 3.646 Å and c = 5.879 Å; (ii) scanning electron microscopy, which revealed the layered structure of the crystals; and (iii) microhardness measurements, which were performed for the first time on this material. The obtained results are consistent with the reported values for the energy gap and melting point of this material.