Title of article :
Growth of diamond on diamond substrates in presence of an alkali and metal under hydrothermal conditions
Author/Authors :
Ravichandran، نويسنده , , D. and Roy، نويسنده , , Rustum، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
8
From page :
1075
To page :
1082
Abstract :
Evidence of diamond growth was observed on a type II-A single crystal diamond in the “hydrothermal” pressure-temperature regime (1.4 kbars at 800 °C) in which both NaOH and Ni were added. The features seen in the SEM appear to be randomly oriented overgrowths ranging in size from 2–5 μm on the surface of a single crystal diamond. The Raman spectrum with the beam focused on these overgrown crystallites showed a sharp band at 1331 cm−1, providing further evidence of diamond growth on a single crystal diamond under pressure-temperature hydrothermal conditions.
Keywords :
A. Electronic materials , B. Epitaxial growth , C. High pressure , C. Electron microscopy
Journal title :
Materials Research Bulletin
Serial Year :
1996
Journal title :
Materials Research Bulletin
Record number :
2093288
Link To Document :
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