Title of article
Double crystal X-Ray diffraction studies on chloride-VPE grown GaxIn1 − xAs layers with different Ga-TO-In ratio
Author/Authors
Pal، نويسنده , , R. and Agarwal، نويسنده , , S.K. and Pal، نويسنده , , D. Subhas Bose، نويسنده , , D.N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
589
To page
594
Abstract
In this paper we present the results of the growth of GaxIn1 − xAs epilayers using Ga-In alloy sources by chloride vapor phase epitaxial technique. The amount of indium incorporated in the epilayers with alloy source composition ranging from 3 to 12 atomic percentage (at%) of Ga is studied. Double crystal X-ray diffractometry (DXRD) has been used to characterize the epitaxial layers.
Keywords
B. Epitaxial growth , C. X-ray diffraction , B. vapor deposition , A. Alloys , A. Metals
Journal title
Materials Research Bulletin
Serial Year
1997
Journal title
Materials Research Bulletin
Record number
2093517
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