Title of article
LASER-INDUCED CRYSTALLIZATION IN Sb2S3 FILMS
Author/Authors
Arun، نويسنده , , P and Vedeshwar، نويسنده , , A.G and Mehra، نويسنده , , N.C، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
7
From page
907
To page
913
Abstract
Crystallization in vacuum evaporated amorphous Sb2S3 films induced by a continuous wave argon laser is studied systematically as a function of laser power, irradiation time, film thickness etc. Results show that the observed amorphous-to-crystalline transformation is irreversible and is mainly due to the thermal process during the laser interaction. The threshold laser power density required to induce crystallization is found to be 98 ± 5 W/cm2. Analyses indicate Sb2S3 films as a potential material for WORM kind of storage applications. © 1997 Elsevier Science Ltd
Keywords
A. Chalcogenides , B. laser annealing , A. Thin films , B. vapor deposition , C. Electron microscopy , D. Phase transitions
Journal title
Materials Research Bulletin
Serial Year
1997
Journal title
Materials Research Bulletin
Record number
2093591
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