Band alignment at the interface of a SnO2/γ-In2Se3 heterojunction

The band alignment at the interface of a Sn02/γ-In2Se3 heterojunction has been studied by XPS. The measurements have been performed on samples obtained under the same experimental conditions as those used to achieve the SnO2/γ-In2Se3 rectifying contact. The γ-In2Se3 upper layer was 5 nm thick. The semi-direct XPS technique used to measure the band offsets allows us to estimate the conduction band discontinuity ΔEc to -0.3 ± 0.3 eV.