The effects of annealing disposition on α-SiC thin films prepared by pulsed laser deposition

SiC thin films have been grown in situ on Si[100] substrates using a XeCl excimer laser (λ = 308 nm). The films were deposited at different temperatures, from room temperature to 900 °C. The structure of the films was studied using modern analysis techniques, such as AES, XPS, TEM, STM, and IR. Polycrystalline α-SiC thin films grown on Si[100] substrates were obtained at 800 °C. The thin films were annealed at 1000 °C in a vacuum system. The effect of annealing disposition on the structure of the film was studied. TEM analysis shows that the annealed film has a hexagonal structure which includes 4H, 8H Or 4H + 8H.