Author/Authors :
Bessergenev، نويسنده , , V.G. and Ivanova، نويسنده , , E.N. and Kovalevskaya، نويسنده , , Yu.A. and Vasilieva، نويسنده , , I.G. and Varand، نويسنده , , V.L. and Zemskova، نويسنده , , S.M. and Larionov، نويسنده , , S.V. and Kolesov، نويسنده , , B.A. and Ayupov، نويسنده , , B.M. and Logvinenko، نويسنده , , V.A.، نويسنده ,
Abstract :
Deposition and characterization of films of ZnS, EuS and ZnS:Eu are described. The films have been prepared by chemical vapor deposition using new volatile complex compounds, dithiocarbamates of Zn and Eu, as precursors. Characterization includes X-ray diffraction, chemical analysis of the film composition, Raman spectroscopy, ellipsometry, and spectrophotometry. The spatial chemical homogeneity of the films has been determined using a recently developed method of differential dissolution and found to be uniform. Doping of ZnS by Eu with dopant concentration up to 0.3 at.% has been achieved. Effects of Eu doping on structural and optical properties of the films are presented.
Keywords :
B. vapor deposition , D. Crystal structure , D. optial properties , A. Chalcogenides , A. Thin films
