Title of article
Single crystal growth and characterization of NiSe2
Author/Authors
Wang، نويسنده , , P. and Somasundaram، نويسنده , , P. and Honig، نويسنده , , J.M. and Pekarek، نويسنده , , T.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
1435
To page
1440
Abstract
A method is described for growth of single crystals of NiSe2 from the elements. The crystals are approximately 5 mm on an edge and free of secondary phases or pores if care is taken in compositional control, in repetitive regrindings, and in slowly removing the sample from the furnace. The electrical and magnetic properties of the crystals are briefly described; no prior measurements of resistivity have been reported below room temperature. A theoretical analysis shows that NiS1.93 is a metal exhibiting weak correlation effects.
Keywords
B. Crystal growth , D. Electrical properties , A. Chalcogenides , D. Magnetic properties
Journal title
Materials Research Bulletin
Serial Year
1997
Journal title
Materials Research Bulletin
Record number
2093744
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