Title of article
A New Approach to Single Crystal Growth of CuO
Author/Authors
Zheng، نويسنده , , X.G and Suzuki، نويسنده , , M and Xu، نويسنده , , C.N، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
605
To page
610
Abstract
The study of the mechanism of superconductivity in high-Tc copper oxide superconductors requires knowledge of their simplest mother material, CuO. We present a novel method for single-crystal growth of CuO to ensure high crystal quality for physics study. Large CuO crystals with dimensions up to 14 × 3 × 0.3 mm3 were grown in a closed 20φ mm quartz glass tube by chemical vapor transport using CuI and BaO2. The evaporating property of CuI and the oxygen-releasing nature of BaO2 at high temperatures were used to obtain a growth-zone on-site oxidization of the evaporated copper to produce rapid crystal growth of CuO. We obtained impurity-free single crystals of CuO with a room-temperature electrical resistivity of about 105 ohm cm with an activation energy of 0.11 eV.
Keywords
D. Electrical properties , B. Crystal growth , A. Oxides , C. X-ray diffraction
Journal title
Materials Research Bulletin
Serial Year
1998
Journal title
Materials Research Bulletin
Record number
2093941
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