The effects of water vapor, heating, and chemical and mechanical polishing on MOS capacitors passivated with BaF2–B2O3–GeO2–SiO2 glasses

The capacitance and voltage (C–V) characteristics of metal oxide semiconductor (MOS) capacitors passivated with BaF2–B2O3–GeO2–SiO2 and BaO–B2O3–GeO2–SiO2 glasses with various OH– radicals and the effects of water vapor, heat, and chemical and mechanical polishing on these MOS capacitors were investigated. As the OH– absorption coefficients of the glasses increased, an adverse effect on the recovery of hysteresis loops of C–V shifts was observed. An adverse effect on the hysteresis loops and Vg shifts was observed when the MOS capacitors were exposed to water vapor, but the hysteresis of the MOS capacitor passivated with BaF2-containing glass disappeared following heat treatment at 400°C for 1 h. When chemical and mechanical polishing was applied to the glasses in the MOS capacitors, improvements in hysteresis and Vg shifts were observed.