Title of article
Deposition of CdS thin films by the successive ionic layer adsorption and reaction (SILAR) method
Author/Authors
Sankapal، نويسنده , , B.R and Mane، نويسنده , , R.S. and Lokhande، نويسنده , , C.D، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
8
From page
177
To page
184
Abstract
CdS thin films were prepared by the successive ionic layer adsorption and reaction (SILAR) method. The structural, optical, and electrical characterizations were carried out using X-ray diffraction, scanning electron microscopy, optical absorption, and electrical resistivity methods. The CdS films were annealed at various temperatures (373–673 K) in nitrogen atmosphere for 30 min and their structural, optical, and electrical properties are reported.
Keywords
A. Semiconductors , A. Thin films , B. Chemical synthesis , C. Electron microscopy , C. X-ray diffraction
Journal title
Materials Research Bulletin
Serial Year
2000
Journal title
Materials Research Bulletin
Record number
2094723
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