Title of article :
Electrical fatigue of ferroelectric PbZr0.5Ti0.5O3 and antiferroelectric PbZrO3 thin films
Author/Authors :
Jang، نويسنده , , Jae Hyuk and Yoon، نويسنده , , Ki-Hyun and Oh، نويسنده , , Ki Young، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
10
From page :
393
To page :
402
Abstract :
The electrical fatigue of sol-gel derived ferroelectric lead zirconate titanate (PZT 50/50) and antiferroelectric lead zirconate (PZ) thin films was found to strongly depend on the orientation and morphology. Compared to the PZT films, the PZ thin films showed a much slower degradation of polarization, due to their having less internal stress during 180° domain switching of the antiferroelectric phase. More than 70% of the initial polarization value of PZ thin films was maintained after 109 cycles of 15 V bipolar square pulse. The randomly oriented PZT films showed less degradation of polarization, compared to the (111) preferred PZT films. In the PZ thin films, the rosette structure with a large portion of pyrochlore phase caused severe fatigue because of nonuniform distribution of electric field and internal stress.
Keywords :
A. Ceramics , D. Ferroelectricity , A. Thin films , A. Electronic materials
Journal title :
Materials Research Bulletin
Serial Year :
2000
Journal title :
Materials Research Bulletin
Record number :
2094771
Link To Document :
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