Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding

In situ deposition of Pb(Zr0.25Ti0.75)O3 thin films by RF magnetron sputtering has been performed at 500°C on Pt/Ti/SiO2/Si substrates without any postannealing treatment. The growth of PZT is ensured, provided that a thin TiOx layer is sputtered prior to PZT. Moreover, we find that sputtering Ti in a 100% argon atmosphere leads to highly (100) oriented films, while adding oxygen during sputtering of Ti leads to purely (111) oriented films. Electrical measurements performed on these films show remanent polarization Pr, coercive field Ec, and dielectric constant consistent with their Zr/Ti ratio.