Title of article :
UHV-STM images on intercalated metal disulfide Ni1/4TiS2 and Ni1/3TiS2: influence of sulfur chemical surrounding
Author/Authors :
Martinez، نويسنده , , H. and Auriel، نويسنده , , C. and Pfister-Guillouzo، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
9
From page :
1643
To page :
1651
Abstract :
The specific crystallographic features of Ni1/3TiS2 and Ni1/4TiS2 led us to carry out ultrahigh vacuum-scanning tunneling microscopy (UHV-STM) studies, in order to bring to light the different atom chemical environments of the structure and the host–guest interactions. These compounds present specific structural reorganizations that involve, in particular, different chemical surroundings for chalcogen atoms (the outer layer of the compounds). We imaged the top sulfur planes (001) for both compounds and propose an explanation of the two well-differentiated contrasts observed.
Keywords :
A. Layered compounds , C. scanning tunneling microscopy (STM)
Journal title :
Materials Research Bulletin
Serial Year :
2000
Journal title :
Materials Research Bulletin
Record number :
2094936
Link To Document :
بازگشت