Title of article :
Deposition of high quality CMR thin films by rf magnetron sputtering under pure argon gas
Author/Authors :
Tang، نويسنده , , W.H and Kam، نويسنده , , T.L. and Gao، نويسنده , , J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
7
From page :
1463
To page :
1469
Abstract :
La0.67Ca0.33MnO3 epitaxial thin films on SrTiO3 (100) substrates were deposited by using an off-axis rf magnetron sputtering under pure argon gas. The as-grown films were annealed under flowing oxygen at different temperatures. The La0.67Ca0.33MnO3 films obtained with and without post annealing were studied by x-ray diffraction, electrical and magnetic measurements, surface profiling and scanning electron microscopy. A very small value of the full width at half maximum (∼0.15o) of the (004) diffraction peak was obtained by rocking curve measurements indicating good crystallinity. The pictures of scanning electron microscopy show that our thin films are extremely smooth and outgrowth free. The average roughness over the scanning region of 2000μm is 1∼2 nm. The post annealing shows almost no effect on the crystallinity and the surface, but greatly enhances the resistance peak temperature, which corresponds to the transition temperature from insulator to metal. The value of the peak temperature is found to be as high as 264K. Our results suggest an efficient and useful deposition process for high quality colossal magnetoresistivity thin films using for device applications.
Keywords :
oxides , sputtering , Electrical properties , epitaxial growth , Thin films
Journal title :
Materials Research Bulletin
Serial Year :
2001
Journal title :
Materials Research Bulletin
Record number :
2095347
Link To Document :
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