Dielectric properties of PbZrxTi1−xO3/PbZrO3 multilayer thin films

Multilayered thin films of Perovskite structure were fabricated by the sol-gel method. The effects of various stacking and annealing sequences of PbZrO3/Pb(Zr,Ti)O3 (PZ/PZT) multilayered thin films that were related to the structural and dielectric properties were investigated. The samples of PZ/annealing/PZT/annealing, PZT/annealing/PZ/annealing films have PZ and PZT structures together. But PZ/PZT/annealing, PZT/PZ/annealing films have mixed phases of PZ and PZT. PZ-based multilayered thin films have more antiferroelectric properties than that of PZT-based films. The results of X-ray, dielectric constants as a function of temperature, photographs of scanning electron microscope (SEM), and D-E hysteresis loop measurement were explained together.