Title of article :
Synthesis and dielectric properties of cubic GaN nanoparticles
Author/Authors :
Wang، نويسنده , , Jacky W.Y and Xu، نويسنده , , Y.P. and Zhang، نويسنده , , D.F and Chen، نويسنده , , X.L، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Cubic GaN nanoparticles were synthesized directly from reactions of metal Ga and NH4I in liquid ammonia in an autoclave at about 300°C. The influence of the reacting temperature, the kind, and content of mineralizer on the synthesis of pure cubic GaN was studied. Dielectric properties of the GaN nanoparticles were measured on LRC meters under the frequency range of 120 Hz to 10 MHz and the temperature range of 23 to 650°C. It is found that there are three characteristics of the dielectric behavior for the nanoparticles of cubic GaN.
Keywords :
B. Chemical synthesis , D. Dielectric properties , A. Nitrides , A. Semiconductors
Journal title :
Materials Research Bulletin
Journal title :
Materials Research Bulletin