Title of article
Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals
Author/Authors
Augustine، نويسنده , , Saji and Mathai، نويسنده , , Elizabeth، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
11
From page
2251
To page
2261
Abstract
Bismuth Selenide single crystals have been grown by the vertical normal freezing technique. Confirmation of the compound formation and the lattice parameters are calculated from the X-ray diffractogram. SEM studies show the parallel cleavage lines in Te-doped samples. Triangular etch pits are obtained on the (111) planes of Bi2Se3. Microindentation studies are carried out on the same plane to understand the mechanical behavior. Annealing and quenching effects of microhardness are evaluated.
Keywords
A. Semiconductor , B. Crystal growth , D. Mechanical properties , D. Defects
Journal title
Materials Research Bulletin
Serial Year
2001
Journal title
Materials Research Bulletin
Record number
2095503
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