Photoluminescence of GaN microcrystallites prepared by a new solvothermal process

GaN microcrystallites have been prepared by a solvothermal process. The influence of the synthesis temperature on the crystallinity of the resulting GaN has been studied on three samples, prepared at 400, 600 and 800°C in the same pressure conditions (150 MPa) and duration (6 h). The resulting powders were characterized by several techniques: X-ray diffraction to evaluate the reaction rate, scanning electron microscopy (SEM) to determine the morphology and size of the microcrystallites and photoluminescence to evaluate the quality of the powders.