Title of article :
Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering
Author/Authors :
Li، نويسنده , , H.Q and Fang، نويسنده , , Q.F and Zhu، نويسنده , , Z.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
859
To page :
866
Abstract :
Epitaxial trilayer films of La0.67Sr0.33MnO3 (LSMO)/La0.75MnO3 (L0.75MO)/La0.67Sr0.33MnO3 (LSMO) have been prepared on (0 0 1) oriented LaAlO3 substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185 K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R0) has been obtained at 132 K under 0.4 T magnetic field for a LSMO (300 nm)/L0.75MO (70 nm)/LSMO (300 nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.
Keywords :
A. Thin films , B. Sputtering , C. Atomic force microscopy , D. X-ray diffraction
Journal title :
Materials Research Bulletin
Serial Year :
2002
Journal title :
Materials Research Bulletin
Record number :
2095744
Link To Document :
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